document number: 94591 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 04-mar-10 1 schottky rectifier, 2.1 a vs-20mq100npbf vishay high power products features ? small foot print, surface mountable ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the vs-20mq100npbf surface mount schottky rectifier has been designed for applic ations requiring low forward drop and very small foot prints on pc boards. typical applications are in disk drive s, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. product summary i f(av) 2.1 a v r 100 v s ma cathode anode major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 2.1 a v rrm 100 v i fsm t p = 5 s sine 120 a v f 2 apk, t j = 125 c 0.72 v t j range - 55 to 150 c voltage ratings parameter symbol vs-20mq100npbf units maximum dc reverse voltage v r 100 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current see fig. 4 i f(av) 50 % duty cycle at t c = 113 c, rectan gular waveform on pc board 9 mm 2 island (0.013 mm th ick copper pad area) 2.1 a maximum peak one cycle non-repetitive surge current see fig. 6 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 120 a 10 ms sine or 6 ms rect. pulse 30 non-repetitive avalanche energy e as t j = 25 c, i as = 0.5 a, l = 8 mh 1.0 mj repetitive avalanche current i ar 0.5 a
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94591 2 revision: 04-mar-10 vs-20mq100npbf vishay high power products schottky rectifier, 2.1 a note (1) pulse width < 300 s, duty cycle < 2 % note (1) thermal runaway condition fo r a diode on its own heatsink electrical specifications parameter symbol test conditions values units maximum forward voltage drop see fig. 1 v fm (1) 2 a t j = 25 c 0.91 v 1.5 a 0.85 1 a 0.78 2 a t j = 125 c 0.72 1.5 a 0.68 1 a 0.63 maximum reverse leakage current see fig. 2 i rm (1) t j = 25 c v r = rated v r 0.1 ma t j = 125 c 1 threshold voltage v f(to) t j = t j maximum 0.52 v forward slope resistance r t 78.4 m typical junction capacitance c t v r = 10 v dc , t j = 25 c, test signal = 1 mhz 38 pf typical series inductance l s measured lead to lead 5 mm from package body 2.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j (1) , t stg - 55 to 150 c maximum thermal resistance, junction to ambient r thja dc operation 80 c/w approximate weight 0.07 g 0.002 oz. marking device case style sma (similar d-64) v2j dp tot dt j ------------- 1 r thja -------------- <
document number: 94591 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 04-mar-10 3 vs-20mq100npbf schottky rectifier, 2.1 a vishay high power products fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical peak reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum average forward current vs. allowable lead temperature fig. 5 - maximum average forward dissipation vs. average forward current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 1.6 insta n ta neo us forw a rd current - i (a) f fm t = 150c t = 125c t = 2 5 c j j j forward voltage drop - v (v) 0 0.0001 0.001 0.01 0.1 1 020406080100 r r 125c 100c 75c 50c 25c reverse current - i (ma) t = 150c j reverse voltage - v (v) 1 10 100 020406080100 t = 2 5 c j r t junction capacitance - c (pf) re v e r se v o l t a g e - v ( v ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 60 70 80 90 100 110 120 130 140 150 160 dc square wave (d=0.50) rated vr applied d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 see note (1) average forward current- i f(av) (a) allowable case temperature (c) 00.511.522.53 0 0.5 1 1.5 2 2.5 3 d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 rms limit dc average forward current- i f(av) (a) average power loss (watts)
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94591 4 revision: 04-mar-10 vs-20mq100npbf vishay high power products schottky rectifier, 2.1 a fig. 6 - maximum peak surge forward current vs. pulse duration ordering information table square wave pulse duration - t p (microsec) non - repetitive surge current - i fsm (a) 10 100 10 100 1000 10000 at any rated load condition and with rated vrrm applied following surge tj = 25?c 2 - current rating 3 - m = sma 4 - q = schottky ?q? series 5 - voltage rating (100 = 100 v) 6 - n = new sma 7 - none = box (1000 pieces) tr = tape and reel (7500 pieces) - pbf = lead (pb)-free 8 1 - hpp product suffix device code 5 13 24 678 vs- 20 m q 100 n tr pbf links to related documents dimensions www.vishay.com/doc?95018 part marking information www.vishay.com/doc?95029 packaging information tape and reel www.vishay.com/doc?95034 bulk www.vishay.com/doc?95397
document number: 95018 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 25-jun-07 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 sma outline dimensions vishay high power products dimensions in millimeters (inches) 2.50 (0.098) 2.90 (0.114) 4.00 (0.157) 4.60 (0.181) 1.40 (0.055) 1.60 (0.062) 0.152 (0.006) 0.305 (0.012) 2.00 (0.078) 2.44 (0.096) 0.76 (0.030) 1.52 (0.060) 0.103 (0.004) 0.203 (0.008) 4.80 (0.188) 5.28 (0.208) 2.10 max. (0.085 max. ) 5.53 (0.218) 1.27 min. (0.050 min.) 1.47 min. (0.058 min.) soldering pad 12 1 2 polarity part number
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